| PART |
Description |
Maker |
| HB56D51232SB-12A HB56D51232SB-6A |
x32 Fast Page Mode DRAM Module X32号快速页面模式内存模
|
Analog Devices, Inc.
|
| HYM532210ATEG-70 HYM532210ASLTE-70 HYM532210ATE-70 |
x32 Fast Page Mode DRAM Module X32号快速页面模式内存模
|
Atmel, Corp.
TE Connectivity, Ltd.
|
| GMM7328100BS-6 GMM7328100BS-8 |
x32 Fast Page Mode DRAM Module X32号快速页面模式内存模
|
Broadcom, Corp.
|
| HB56U432SB-6N HB56U832B-5NL HB56U832B-7NL |
x32 EDO Page Mode DRAM Module X32号，江户页面模式内存模块
|
Altera, Corp.
|
| MT8LDT264HG-6X MT4LDT164HG-6X MT8LDT264HG-6S MT4LD |
x64 Fast Page Mode DRAM Module
x64 EDO Page Mode DRAM Module X64的EDO公司页面模式内存模块
|
Micron Technology, Inc.
|
| M5M465400DTP-6S M5M467400DTP-6S M5M465160DTP-5 M5M |
FAST PAGE MODE 67108864-BIT (16777216-WORD BY 4-BIT) DYNAMIC RAM 快速页面模7108864位（16777216 - Word位）动态随机存储器
4M X 16 FAST PAGE DRAM, 50 ns, PDSO50
16M X 4 FAST PAGE DRAM, 50 ns, PDSO32
|
Mitsubishi Electric Corporation
Mitsubishi Electric, Corp.
|
| AS4C256K16F0-25JC AS4C256K16F0-25JI AS4C256K16F0-2 |
5V 256K x 16 CM0S DRAM (fast page mode), 30ns RAS access time
x16FastPageModeDRAM
5V 256K X 16 CMOS DRAM (Fast Page Mode)
5V 256K x 16 CM0S DRAM (fast page mode), 35ns RAS access time
5V 256K x 16 CM0S DRAM (fast page mode), 50ns RAS access time
5V 256K x 16 CM0S DRAM (fast page mode), 25ns RAS access time
|
Alliance Semiconductor Corporation
|
| AS4C4M4F0-50JC AS4C4M4F0-50JI AS4C4M4F0-50TC AS4C4 |
x4 Fast Page Mode DRAM
5V 4M x 4 CMOS DRAM (Fast Page mode) 5V米4的CMOS的DRAM（快速页模式
|
Alliance Semiconductor, Corp.
|
| GMM791000ENS-80 |
x(8 1) Fast Page Mode DRAM Module ×8 1）快速页面模式内存模
|
NXP Semiconductors N.V.
|
| HB56A49AT-8 HB56A49GBR-6A HB56A49ATR-6A HB56A49AR- |
x(8 1) Fast Page Mode DRAM Module ×8 1）快速页面模式内存模
x(8 1) Fast Page Mode DRAM Module × 1）快速页面模式内存模
|
Vishay Intertechnology, Inc.
Analog Devices, Inc.
|
| HYM591600LM-60 HYM591600LM-70 HYM591600LM-80 HYM59 |
x(8 1) Fast Page Mode DRAM Module ×8 1）快速页面模式内存模
x(8 1) Fast Page Mode DRAM Module × 1）快速页面模式内存模
|
Cypress Semiconductor, Corp.
TE Connectivity, Ltd.
|
